CHARACTERIZATION OF ZNO/CDS/CUINSE2 THIN-FILM SOLAR-CELLS BY DEEP-LEVEL TRANSIENT SPECTROSCOPY

被引：6
|
作者：
KURANOUCHI, SI [1 ]
KONAGAI, M [1 ]
机构：
[1] TOKYO INST TECHNOL,FAC ENGN,DEPT ELECT & ELECTR ENGN,MEGURO KU,TOKYO 152,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 5A期
关键词：
CIS; THIN-FILM SOLAR CELL; DEEP LEVEL; HOLE TRAP; DLTS; SELENIZATION;
D O I：
10.1143/JJAP.34.2350
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Trap energy levels in CuInSe2 (CIS) films have been measured by means of deep-level transient spectroscopy (DLTS). ZnO/CdS/CIS solar cells with conversion efficiencies of 5-11% were used as samples. Hole traps were detected for all samples measured in this study. Activation energy of traps in each sample was estimated to be in the range from 78 to 226 meV, which is shallower than any other reported values. Characteristics of the trap were thought to depend on the fabrication process of CIS films.
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收藏
页码：2350 / 2351
页数：2
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