STRAIN RELIEF IN COMPOSITIONALLY GRADED INASXSB1-X BUFFER LAYERS AND INASXSB1-X/INSB STRAINED-LAYER SUPERLATTICES GROWN BY MOCVD

被引：57
|
作者：
BIEFELD, RM
HILLS, CR
LEE, SR
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1988年 / 91卷 / 04期
关键词：
D O I：
10.1016/0022-0248(88)90119-4
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：515 / 526
页数：12
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