EFFECTS OF WHOLE INGOT ANNEALING ON 1.49 EV PL PROPERTIES IN LEC-GROWN SEMI-INSULATING GAAS

被引：10

|

作者：

YOKOGAWA, M

NISHINE, S

SASAKI, M

MATSUMOTO, K

FUJITA, K

AKAI, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1984年 / 23卷 / 05期

关键词：

D O I：

10.1143/JJAP.23.L339

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：L339 / L341

页数：3

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