THE GROWTH OF INP/INGAASP/INGAAS HETEROSTRUCTURE ON (100)INP SUBSTRATE BY LPE WITHOUT MELTBACK OF UNDERLYING LAYERS

被引：5
|
作者：
MATSUMOTO, Y
TAGUCHI, K
ISHIDA, K
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1984年 / 69卷 / 01期
关键词：
D O I：
10.1016/0022-0248(84)90008-3
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：53 / 61
页数：9
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