HIGH QUANTUM EFFICIENCY STRAINED INGAAS/ALGAAS QUANTUM-WELL RESONANT-CAVITY INVERSION CHANNEL BIPOLAR FIELD-EFFECT PHOTOTRANSISTOR

被引：7
|
作者：
DARYANANI, S [1 ]
TAYLOR, GW [1 ]
COOKE, P [1 ]
EVALDSSON, P [1 ]
VANG, T [1 ]
机构：
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源：
APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 26期
关键词：
D O I：
10.1063/1.105654
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A high-efficiency, resonant-cavity, bipolar inversion channel field-effect transistor detector is demonstrated with a triple-strained InGaAs quantum-well absorbing region. A quantum efficiency of 80% is obtained at a resonant wavelength of 0.94-mu-m, and a bandwidth of 20 angstrom, giving a 26-fold enhancement in absorption due to resonance. The transistor detector operates in the FET mode with an independent gate electrode to control its sensitivity, and in a bipolar mode with a photogain of 25. The structure is identical to that used in other inversion channel laser structures, and hence provides an optimum configuration for optoelectronic integration. This is the first demonstration of a three-terminal quantum-well resonant-cavity photodetector.
引用
收藏
页码：3464 / 3466
页数：3
相关论文
共 50 条
  • [1] ALGAAS/INGAAS/GAAS QUANTUM-WELL DOPED CHANNEL HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS
    RUDEN, PP
    SHUR, M
    AKINWANDE, AI
    NOHAVA, JC
    GRIDER, DE
    BAEK, JH
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (10) : 2171 - 2175
  • [2] P-CHANNEL, STRAINED QUANTUM-WELL, FIELD-EFFECT TRANSISTOR
    DRUMMOND, TJ
    ZIPPERIAN, TE
    FRITZ, IJ
    SCHIRBER, JE
    PLUT, TA
    [J]. APPLIED PHYSICS LETTERS, 1986, 49 (08) : 461 - 463
  • [3] STRAINED QUANTUM-WELL VALENCE-BAND STRUCTURE AND OPTIMAL PARAMETERS FOR ALGAAS-INGAAS-ALGAAS P-CHANNEL FIELD-EFFECT TRANSISTORS
    LAIKHTMAN, B
    KIEHL, RA
    FRANK, DJ
    [J]. JOURNAL OF APPLIED PHYSICS, 1991, 70 (03) : 1531 - 1538
  • [4] ELECTROREFLECTANCE SPECTRA OF INGAAS/ALGAAS STRAINED QUANTUM-WELL STRUCTURES
    FRITZ, IJ
    BRENNAN, TM
    GINLEY, DS
    [J]. SOLID STATE COMMUNICATIONS, 1990, 75 (04) : 289 - 292
  • [5] QUANTUM-WELL P-CHANNEL ALGAAS/INGAAS/GAAS HETEROSTRUCTURE INSULATED-GATE FIELD-EFFECT TRANSISTORS
    RUDEN, PP
    SHUR, M
    ARCH, DK
    DANIELS, RR
    GRIDER, DE
    NOHAVA, TE
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (11) : 2371 - 2379
  • [6] HIGH-POWER OPERATION OF STRAINED INGAAS ALGAAS SINGLE QUANTUM-WELL LASERS
    MOSER, A
    OOSENBRUG, A
    LATTA, EE
    FORSTER, T
    GASSER, M
    [J]. APPLIED PHYSICS LETTERS, 1991, 59 (21) : 2642 - 2644
  • [7] ANALYSIS OF THE HIGH-TEMPERATURE CHARACTERISTICS OF INGAAS ALGAAS STRAINED QUANTUM-WELL LASERS
    DERRY, PL
    FU, RJ
    HONG, CS
    CHAN, EY
    FIGUEROA, L
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1992, 28 (12) : 2698 - 2705
  • [8] STABILITY OF STRAINED QUANTUM-WELL FIELD-EFFECT TRANSISTOR STRUCTURES
    PEERCY, PS
    DODSON, BW
    TSAO, JY
    JONES, ED
    MYERS, DR
    ZIPPERIAN, TE
    DAWSON, LR
    BIEFELD, RM
    KLEM, JF
    HILLS, CR
    [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (12) : 621 - 623
  • [9] InGaP/InGaAs quantum-well delta-doped-channel field-effect transistor
    Cheng, CC
    Cheng, SY
    Chuang, HM
    Chen, CY
    Lai, PH
    Kao, CI
    Hong, CW
    Chen, CW
    Liu, WC
    [J]. MICROELECTRONICS: DESIGN, TECHNOLOGY, AND PACKAGING, 2004, 5274 : 407 - 415
  • [10] Channel Thickness Dependence of InGaAs Quantum-Well Field-Effect Transistors With High-κ Gate Dielectrics
    Xue, Fei
    Jiang, Aiting
    Zhao, Han
    Chen, Yen-Ting
    Wang, Yanzhen
    Zhou, Fei
    Lee, Jack
    [J]. IEEE ELECTRON DEVICE LETTERS, 2012, 33 (09) : 1255 - 1257
12345