Observation of ferromagnetism in highly oxygen-deficient HfO2 films

被引：4
|
作者：
Ran, Jiang [1 ]
Yan, Zhang [2 ]
机构：
[1] Shandong Univ, Sch Phys, Jinan 250100, Peoples R China
[2] Shandong Univ, Sch Informat Sci & Engn, Jinan 250100, Peoples R China
来源：
JOURNAL OF SEMICONDUCTORS | 2009年 / 30卷 / 10期
基金：
国家教育部博士点专项基金资助;
关键词：
sputtering; dielectrics; high k; d(0) magnetism; oxygen vacancy;
D O I：
10.1088/1674-4926/30/10/102002
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Ferromagnetism in undoped and cobalt-doped high-k HfO2 films was investigated. No ferromagnetism was observed in stoichiometric HfO2 films, but we observed weak ferromagnetism in highly oxygen-deficient HfO2 films. Undoped and cobalt doped films were treated by alternate annealing in vacuum and oxygen atmospheres. From the experiments, both the lack of oxygen vacancies and the increase of oxygen species in bulk (e.g. interstitial oxygen) will degrade the magnetic ordering. Additionally, it is believed that cobalt doping has no obvious relationship with the observed intrinsic d(0) magnetism.
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页数：5
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