EMPIRICAL RELATIONSHIPS BETWEEN THERMAL-CONDUCTIVITY AND TEMPERATURE FOR SILICON AND GERMANIUM

被引：0

作者：

KOKKAS, AG ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

RCA REVIEW | 1974年 / 35卷 / 04期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：579 / 581

页数：3

共 50 条

[1] THERMAL-CONDUCTIVITY OF GERMANIUM DOPED WITH SILICON, TIN, AND ALUMINUM
BAKHCHIEVA, SR
KEKELIDZE, NP
KEKUA, MG
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1984, 83 (01): : 139 - 145
[2] THERMAL-CONDUCTIVITY VARIATION OF SILICON WITH TEMPERATURE
PRAKASH, C
[J]. MICROELECTRONICS AND RELIABILITY, 1978, 18 (04): : 333 - 333
[3] MINIMUM THERMAL-CONDUCTIVITY OF GERMANIUM
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[J]. THIN SOLID FILMS, 1983, 103 (1-2) : L47 - L48
[4] LOW-TEMPERATURE THERMAL-CONDUCTIVITY OF AMORPHOUS-GERMANIUM
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STEGLICH, F
[J]. PHYSICAL REVIEW LETTERS, 1977, 39 (22) : 1420 - 1423
[5] EFFECT OF DISLOCATIONS ON LOW-TEMPERATURE THERMAL-CONDUCTIVITY IN GERMANIUM
SATO, M
SUMINO, K
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1974, 36 (04) : 1075 - 1083
[6] ROLE OF THE DEBYE TEMPERATURE IN THE LATTICE THERMAL-CONDUCTIVITY OF SILICON
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[J]. JOURNAL OF THERMAL ANALYSIS, 1991, 37 (02): : 277 - 284
[7] THERMAL-CONDUCTIVITY OF SILICON BORIDES
DAROLLES, JM
LEPETRE, T
DUSSEAU, JM
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 58 (01): : K71 - K75
[8] EFFECTS OF ETCHING AND OXIDATION ON THERMAL-CONDUCTIVITY OF GERMANIUM
CAMPISI, GJ
FRANKL, DR
[J]. PHYSICAL REVIEW B, 1974, 10 (06): : 2644 - 2646
[9] THERMAL-CONDUCTIVITY OF GERMANIUM AT LOW-TEMPERATURES
SRIVASTAV, GC
KUMAR, A
[J]. PHYSICAL REVIEW B, 1982, 25 (04): : 2560 - 2566
[10] LOW-TEMPERATURE LATTICE THERMAL-CONDUCTIVITY OF UNDOPED GERMANIUM AND BOUNDARY SCATTERING
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INDU, BD
[J]. NATIONAL ACADEMY SCIENCE LETTERS-INDIA, 1980, 3 (04): : 128 - 131

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