DEAD ZONES ON SURFACE OF P-I-N DETECTORS

被引：0
|
作者：
DINGER, R [1 ]
机构：
[1] UNIV BASEL, INST PHYS, BASEL, SWITZERLAND
来源：
HELVETICA PHYSICA ACTA | 1974年 / 47卷 / 02期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：220 / 237
页数：18
相关论文
共 50 条
  • [1] DEAD LAYERS AT SURFACE OF P-I-N DETECTORS - REVIEW
    DINGER, RJ
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, NS22 (01) : 135 - 139
  • [2] Dead layer on silicon p-i-n diode charged-particle detectors
    Wall, B. L.
    Amsbaugh, J. F.
    Beglarian, A.
    Bergmann, T.
    Bichsel, H. C.
    Bodine, L. I.
    Boyd, N. M.
    Burritt, T. H.
    Chaoui, Z.
    Corona, T. J.
    Doe, P. J.
    Enomoto, S.
    Harms, F.
    Harper, G. C.
    Howe, M. A.
    Martin, E. L.
    Parno, D. S.
    Peterson, D. A.
    Petzold, L.
    Renschler, P.
    Robertson, R. G. H.
    Schwarz, J.
    Steidl, M.
    van Wechel, T. D.
    vanDevender, B. A.
    Wuestling, S.
    Wierman, K. J.
    Wilkerson, J. F.
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2014, 744 : 73 - 79
  • [3] GaN p-i-n ultraviolet detectors
    Chen, Jiang-Feng
    Li, Xue
    [J]. Bandaoti Guangdian/Semiconductor Optoelectronics, 2005, 26 (06): : 491 - 493
  • [4] Frequency limits of microcrystalline p-i-n detectors
    Vieira, M
    Maçarico, F
    Fernandes, M
    Koynov, S
    Schwarz, R
    [J]. QUIMICA ANALITICA, 1999, 18 : 93 - 95
  • [5] P-I-N DIODE DETECTORS FOR ASTRONOMICAL PHOTOMETRY
    FISHER, R
    [J]. APPLIED OPTICS, 1968, 7 (06): : 1079 - &
  • [6] ON INFLUENCE OF DEFECTS IN SILINCON P-I-N DETECTORS
    YUSKESELIEVA, LG
    [J]. IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1967, 31 (02): : 255 - +
  • [7] High performance p-i-n CdTe and CdZnTe detectors
    Petersburg Nuclear Physics Institute, 188350, Gatchina, St. Petersburg, Russia
    不详
    [J]. Nucl Instrum Methods Phys Res Sect A, 1 (58-65):
  • [8] InGaAs p-i-n detectors with different cap layers
    Wei, Peng
    Li, Xue
    Tang, Hengjing
    Gong, Haimei
    [J]. INTERNATIONAL SYMPOSIUM ON OPTOELECTRONIC TECHNOLOGY AND APPLICATION 2014: INFRARED TECHNOLOGY AND APPLICATIONS, 2014, 9300
  • [9] ACOUSTOSTIMULATION PROCESSES IN SI(LI)-P-I-N DETECTORS
    GAIBOV, AG
    ZAVERYUKHIN, BN
    KREVCHIK, VD
    MUMINOV, RA
    NIGMANOV, O
    SHAMAGDIEV, AS
    [J]. PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1984, 10 (10): : 616 - 620
  • [10] Fabrication and performance of p-i-n CdTe radiation detectors
    Niraula, M
    Mochizuki, D
    Aoki, T
    Tomita, Y
    Nihashi, T
    Hatanaka, Y
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1999, 436 (1-2): : 132 - 137
12345