POINT-DEFECT STRUCTURES AND ENERGETICS IN SI USING AN EMPIRICAL POTENTIAL

被引：7

作者：

UNGAR, PJ ^{[1
]}

TAKAI, T ^{[1
]}

HALICIOGLU, T ^{[1
]}

TILLER, WA ^{[1
]}

机构：

[1] STANFORD UNIV,DEPT MAT SCI & ENGN,STANFORD,CA 94305

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1993年 / 11卷 / 01期

关键词：

D O I：

10.1116/1.578707

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Statics calculations on silicon using the Tersoff 2 and Tersoff 3 potential energy functions are presented. We have evaluated the following at 0 K: (1) neutral monovacancy and divacancy formation and migration energies; (2) neutral bond-centered, site sharing, tetrahedral, and hexagonal self-interstitial formation and migration energies; and (3) the variation of these energies with distance from a bulk site of Frenkel defect formation and from [100] and [111] surfaces. The structural variations around these defects are also determined and discussed.

引用

页码：224 / 230

页数：7

共 50 条

[1] A POINT-DEFECT MODEL FOR NICKEL ELECTRODE STRUCTURES
LOYSELLE, PL
KARJALA, PJ
CORNILSEN, BC
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : C298 - C298
[2] Enhancement of boron solid solubility in Si by point-defect engineering
Shao, L
Zhang, JM
Chen, J
Tang, D
Thompson, PE
Patel, S
Wang, XM
Chen, H
Liu, JK
Chu, WK
APPLIED PHYSICS LETTERS, 2004, 84 (17) : 3325 - 3327
[3] A STUDY OF POINT-DEFECT DETECTORS CREATED BY SI AND GE IMPLANTATION
MENG, HL
PRUSSIN, S
LAW, ME
JONES, KS
JOURNAL OF APPLIED PHYSICS, 1993, 73 (02) : 955 - 960
[4] ATOM DISPLACEMENTS AND POINT-DEFECT SUPERSTRUCTURE IN TETRAHEDRAL SEMICONDUCTOR STRUCTURES
VAIPOLIN, AA
FIZIKA TVERDOGO TELA, 1990, 32 (12): : 3637 - 3641
[5] CALCULATION OF POTENTIAL WELL OF THE SCREENED POINT-DEFECT USING FRENKEL-POOL EFFECT
GORBACHOV, VV
KVASKOV, VB
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1979, (02): : 108 - 110
[6] Theoretical assessment on the possibility of constraining point-defect energetics by pseudo phase transition pressures
Geng, Hua Y.
Song, Hong X.
Wu, Q.
PHYSICAL REVIEW B, 2013, 87 (17):
[7] First-principles study of point-defect production in Si and SiC
Windl, W
Lenosky, TJ
Kress, JD
Voter, AF
SEMICONDUCTOR PROCESS AND DEVICE PERFORMANCE MODELLING, 1998, 490 : 41 - 46
[8] FREE-ENERGIES, STRUCTURES, AND DIFFUSION OF POINT-DEFECTS IN SI USING AN EMPIRICAL POTENTIAL
UNGAR, PJ
HALICIOGLU, T
TILLER, WA
PHYSICAL REVIEW B, 1994, 50 (11): : 7344 - 7357
[9] POINT-DEFECT CLUSTERS IN WUSTITE
RADLER, MJ
COHEN, JB
FABER, J
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1990, 51 (03) : 217 - 228
[10] POINT-DEFECT SPECTRUM OF SILANE
WILDE, RE
SRINIVAS.TK
OBRIEN, TJ
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1971, (MAR-A): : 52 - &

← 1 2 3 4 5 →