CHARACTERISTICS OF MOS-CONTROLLED THYRISTORS UNDER ZERO VOLTAGE SOFT-SWITCHING CONDITIONS

被引：8
|
作者：
DEDONCKER, RWAA [1 ]
JAHNS, TM [1 ]
RADUN, AV [1 ]
WATROUS, DL [1 ]
TEMPLE, VAK [1 ]
机构：
[1] HARRIS POWER RES & DEV,HARRIS SEMICOND,SCHENECTADY,NY 12301
来源：
IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS | 1992年 / 28卷 / 02期
关键词：
D O I：
10.1109/28.126747
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
During the development of new MOS-controlled thyristors (MCT's), considerable effort has been spent to evaluate and enhance the dynamic performance of MCT's under zero voltage soft-switching conditions encountered in several resonant converter configurations. The purpose of this paper is to summarize key MCT characterization results as they relate to their dynamic performance during zero voltage switching. Furthermore, a test circuit that enables characterization of the zero voltage turn-on and turn-off switching losses of the device is proposed. Behavior models are proposed and evaluated to predict the MCT turn-off losses under various soft-switching conditions. These models are useful for both the circuit designer and the device designer in order to optimize device performance in high-frequency, soft-switching converters.
引用
收藏
页码：387 / 394
页数：8
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