PHYSICS AND PERFORMANCE OF ACCUMULATION-MODE SOI P-MOSFETS FROM LOW (77 K) TO HIGH (150-320-DEGREES-C) TEMPERATURES

被引：1
|
作者：
FLANDRE, D
TERAO, A
LOO, T
COLINGE, JP
机构：
[1] Laboratoire de Microélectronique, Université Catholique de Louvain, 1348 Louvain-la-Neuve
来源：
MICROELECTRONIC ENGINEERING | 1992年 / 19卷 / 1-4期
关键词：
D O I：
10.1016/0167-9317(92)90548-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A theoretical analysis of the physics of accumulation-mode SOI p-MOSFET's is supported by new experimental data at room temperature, then extended to low (77 K) and high (150-320-degrees-C) temperature domains. The electrical performances of these devices under such temperature conditions are discussed and shown to be compatible with circuit requirements.
引用
收藏
页码：803 / 806
页数：4
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