NEW PARAMAGNETIC CENTER IN AMORPHOUS-SILICON DOPED WITH RARE-EARTH ELEMENTS

被引：8
|
作者：
CASTILHO, JH
MARQUES, FC
BARBERIS, GE
RETTORI, C
ALVAREZ, F
CHAMBOULEYRON, I
机构：
来源：
PHYSICAL REVIEW B | 1989年 / 39卷 / 04期
关键词：
D O I：
10.1103/PhysRevB.39.2860
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：2860 / 2863
页数：4
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