HOT-ELECTRONS IN INAS STUDIED BY PICOSECOND INFRARED PULSES

被引：3
|
作者：
BAUERLE, RJ
ELSAESSER, T
KAISER, W
机构：
[1] Dept. of Phys., Tech. Univ. Munchen
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1990年 / 5卷
关键词：
D O I：
10.1088/0268-1242/5/3S/038
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The transient infrared absorption of hot electrons in n-doped InAs is studied in the wavelength range around 7 mu m. After heating the electron gas by a picosecond infrared pulse, the free carrier absorption shows a fast rise by several tens of per cent which relaxes within 100 ps. Excess LO phonons created by the cooling process are essential for the observed change of the free carrier absorption. The studies presented give valuable information on the distribution function of hot phonons.
引用
收藏
页码：S176 / S178
页数：3
相关论文
共 50 条
12345