STRUCTURE AND TRANSPORT-PROPERTIES OF AMORPHOUS SNXSI1-X ALLOYS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1)

被引：6

作者：

VERGNAT, M

MARCHAL, G

MANGIN, P

机构：

[1] Laboratoire de Physique du Solide (U.A. au C.N.R.S. no 155), Université de Nancy I, 54506 Vandœuvre les Nancy Cedex

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80267-4

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Evaporation on substrates maintained at 77 K under an atomic hydrogen flow allows us to prepare amorphous semiconductor tin. The resistivity is very high, 3 x 10(3) OMEGA-.cm and the diffraction pattern is typical of the random continuous networks of amorphous germanium and silicon. This structure is stable up to 180 K. The alloys SnxSi1-x prepared by this method present a continuous variation of the crystallization temperature and of the electrical behaviour versus the composition.

引用

页码：907 / 910

页数：4

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