DETERMINATION OF THE CENTROID DEPTHS OF THE DEPTH PROFILES OF ION-IMPLANTED ANALYTES BY ANGLE-RESOLVED ELECTRON MICROBEAM ANALYSIS

被引：12

作者：

GRIES, WH

KOSCHIG, W

机构：

[1] Research Institute of the Deutsche Bundespost TELEKOM, Darmstadt, D-6100

来源：

SURFACE AND INTERFACE ANALYSIS | 1990年 / 16卷 / 1-12期

关键词：

D O I：

10.1002/sia.740160168

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Angle‐resolved signal ratio electron microbeam analysis (AR/SR/EMA) was applied for the determination of the centroid depth of the ion‐implanted depth profile of 100 keV 1016 cm−2 P in Si. The experiment is part of an investigation on the suitability of AR/SR/EMA for application in the (non‐destructive) calibration of ion‐implanted reference materials. Copyright © 1990 John Wiley & Sons Ltd.

引用

页码：321 / 324

页数：4

共 13 条

[1] ANGLE-RESOLVED SELF-RATIO MEASUREMENTS ON ION-IMPLANTED DEPTH PROFILES BY SYNCHROTRON X-RAY-FLUORESCENCE SPECTROMETRY
SCHMITT, W
ROTHE, J
HORMES, J
GRIES, WH
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (04): : 2467 - 2472
[2] Quantitative determination of depth carrier profiles in ion-implanted Gallium Nitride
Iucolano, F.
Giannazzo, F.
Roccaforte, F.
Romano, L.
Grimaldi, M. G.
Raineri, V.
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 257 : 336 - 339
[3] DETERMINATION OF THE DEPTH PROFILES OF ION-IMPLANTED IMPURITIES BY ELECTRON-PROBE X-RAY-MICROANALYSIS
ALEXEYEV, AP
[J]. SURFACE AND INTERFACE ANALYSIS, 1992, 18 (12) : 794 - 798
[4] AN ANGLE-RESOLVED, WAVELENGTH-DISPERSIVE X-RAY-FLUORESCENCE SPECTROMETER FOR DEPTH PROFILE ANALYSIS OF ION-IMPLANTED SEMICONDUCTORS USING SYNCHROTRON RADIATION
SCHMITT, W
HORMES, J
KUETGENS, U
GRIES, WH
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1992, 63 (01): : 1194 - 1197
[5] INFLUENCE OF THE DETECTOR RESPONSE FUNCTION IN THE DETERMINATION OF CONCENTRATION DEPTH PROFILES FROM ANGLE-RESOLVED ELECTRON-SPECTROSCOPY
VANVEEN, NJ
[J]. ANALYTICAL CHEMISTRY, 1987, 59 (17) : 2088 - 2091
[6] NONDESTRUCTIVE DETERMINATION OF DAMAGE DEPTH PROFILES IN ION-IMPLANTED SEMICONDUCTORS BY MULTIPLE-ANGLE-OF-INCIDENCE SINGLE-WAVELENGTH ELLIPSOMETRY
FRIED, M
LOHNER, T
JAROLI, E
HAJDU, C
GYULAI, J
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 55 (1-4): : 257 - 260
[7] NONDESTRUCTIVE DETERMINATION OF DAMAGE DEPTH PROFILES IN ION-IMPLANTED SEMICONDUCTORS BY SPECTROSCOPIC ELLIPSOMETRY USING DIFFERENT OPTICAL-MODELS
FRIED, M
LOHNER, T
AARNINK, WAM
HANEKAMP, LJ
VANSILFHOUT, A
[J]. JOURNAL OF APPLIED PHYSICS, 1992, 71 (06) : 2835 - 2843
[8] AN EVALUATION OF THE CAPABILITIES OF PHOTON AND ELECTRON SPECTROSCOPIES FOR NONDESTRUCTIVE QUANTITATIVE MEASUREMENTS ON ANALYTE DEPTH PROFILES BY THE ANGLE-RESOLVED SIGNAL RATIO METHOD
GRIES, WH
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03): : 1655 - 1662
[9] NONDESTRUCTIVE DETERMINATION OF DAMAGE DEPTH PROFILES IN ION-IMPLANTED SEMICONDUCTORS BY MULTIPLE-ANGLE-OF-INCIDENCE SINGLE-WAVELENGTH ELLIPSOMETRY USING DIFFERENT OPTICAL-MODELS
FRIED, M
LOHNER, T
JAROLI, E
KHANH, NQ
HAJDU, C
GYULAI, J
[J]. JOURNAL OF APPLIED PHYSICS, 1992, 72 (06) : 2197 - 2201
[10] DEPTH SELECTIVE MICROSTRUCTURAL ANALYSIS OF ION-IMPLANTED METALS BY CROSS-SECTION TRANSMISSION ELECTRON-MICROSCOPY AND COMPUTER-SIMULATION
GERRITSEN, E
KEETELS, HAA
LIGTHART, HJ
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 39 (1-4): : 614 - 618

← 1 2 →