MOBILITY OF HOT-ELECTRONS IN A MAGNETIC-FIELD

被引：0

作者：

SHUR, MS ^{[1
]}

机构：

[1] AF IOFFE ENGN PHYS INST, LENINGRAD, USSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1976年 / 10卷 / 01期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：88 / 90

页数：3

共 50 条

[1] MAXIMUM OF MOBILITY OF HOT-ELECTRONS IN LONGITUDINAL QUANTIZING MAGNETIC-FIELD
BENESLAVSKII, SD
POLEVAYA, NA
[J]. FIZIKA TVERDOGO TELA, 1978, 20 (09): : 2687 - 2695
[2] RELAXATION OF HOT-ELECTRONS IN A SEMICONDUCTOR LOCATED IN A STRONG MAGNETIC-FIELD
GLAZMAN, LI
[J]. ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI, 1983, 84 (01): : 230 - 236
[3] HOT-ELECTRONS IN A QUANTIZING MAGNETIC-FIELD AND IMPACT IONIZATION OF IMPURITIES
ZLOBIN, AM
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (04): : 393 - 396
[4] ACOUSTOMAGNETOELECTRIC AND ACOUSTOELECTRIC EFFECTS IN A SEMICONDUCTOR WITH HOT-ELECTRONS IN A MAGNETIC-FIELD
SHKERDIN, GN
LISTVINA, NN
BUGAEV, AS
GULYAEV, YV
[J]. SOVIET PHYSICS SOLID STATE,USSR, 1972, 13 (11): : 2674 - +
[5] CRITERIA OF ELECTROMAGNETIC-INSTABILITY OF HOT-ELECTRONS IN A MAGNETIC-FIELD
VALOV, VA
KOZLOV, VA
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (06): : 674 - 676
[6] ENERGY-DISTRIBUTION OF PHOTOEXCITED HOT-ELECTRONS IN A QUANTIZING MAGNETIC-FIELD
LEWINER, C
CALECKI, D
POTTIER, N
[J]. PHYSICAL REVIEW B, 1978, 18 (11): : 6348 - 6357
[7] EFFECT OF HOT-ELECTRONS ON EXCITON LUMINESCENCE OF ULTRAPURE GAAS IN A MAGNETIC-FIELD
ROSSIN, VV
CHRISTIANEN, PCM
TRAVNIKOV, VV
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (05) : 716 - 718
[8] EFFECT OF HOT-ELECTRONS ON THE MAGNETIC-FIELD ENHANCEMENT OF EXCITON LUMINESCENCE IN GAAS
ROSSIN, VV
CHRISTIANEN, PCM
TRAVNIKOV, VV
[J]. SOLID STATE COMMUNICATIONS, 1993, 87 (07) : 623 - 626
[9] EIGENOSCILLATIONS OF HOT-ELECTRONS IN AN INHOMOGENEOUS SEMICONDUCTOR UNDER CLASSICALLY STRONG MAGNETIC-FIELD
DYKMAN, IM
PROKHNITSKII, LA
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 93 (01): : 119 - 125
[10] INFLUENCE OF A MAGNETIC-FIELD ON THE EMISSION PROBABILITY OF HOT-ELECTRONS FROM SILICON INTO SILICON DIOXIDE
GARRIGUES, M
PAVLIN, A
HELLOUIN, Y
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) : 2672 - 2676

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