MODELING OF TRANSCONDUCTANCE DEGRADATION AND EXTRACTION OF THRESHOLD VOLTAGE IN THIN OXIDE MOSFET

被引：238
|
作者：
WONG, HS
WHITE, MH
KRUTSICK, TJ
BOOTH, RV
机构：
来源：
SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 09期
关键词：
D O I：
10.1016/0038-1101(87)90132-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：953 / 968
页数：16
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