CRYSTALLOGRAPHIC ETCHING PHENOMENON DURING PLASMA-ETCHING OF SIC(100) THIN-FILMS IN SF6

被引：11
|
作者：
PALMOUR, JW
WILLIAMS, BE
ASTELLBURT, P
DAVIS, RF
机构：
[1] N CAROLINA STATE UNIV, DEPT MAT SCI & ENGN, RALEIGH, NC 27695 USA
[2] PLASMA TECHNOL LTD, BRISTOL BS19 4AP, ENGLAND
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 02期
关键词：
D O I：
10.1149/1.2096660
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：491 / 495
页数：5
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