EFFECTS OF IMPURITY TRANSITIONS ON ELECTROREFLECTANCE IN THIN EPITAXIAL GAAS AND GA1-XALXAS/GAAS LAYERS

被引：27
|
作者：
GLEMBOCKI, OJ
BOTTKA, N
FURNEAUX, JE
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 02期
关键词：
D O I：
10.1063/1.334769
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：432 / 437
页数：6
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