共 50 条
- [5] Helium ion implantation-induced defects in silicon probed with variable-energy positrons PHYSICAL REVIEW B, 2003, 68 (16):
- [6] POINT-DEFECT PRODUCTION IN ARSENIC-DOPED SILICON STUDIED WITH VARIABLE-ENERGY POSITRONS APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1989, 49 (03): : 335 - 339
- [7] REINTERPRETATION OF OXYGEN ON A1 SAMPLES BY VARIABLE-ENERGY POSITRONS PHYSICAL REVIEW B, 1986, 33 (05): : 3507 - 3508
- [10] Oxygen-related defects in Si studied by variable-energy positron annihilation spectroscopy PHYSICAL REVIEW B, 1996, 53 (19): : 13047 - 13050