Composition fluctuations in strained InGaAlAs layers grown on (001)InP

被引：0
|
作者：
Murray, RT [1 ]
Kiely, CJ [1 ]
Goodhew, PJ [1 ]
Hopkinson, M [1 ]
机构：
[1] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
来源：
ELECTRON MICROSCOPY AND ANALYSIS 1995 | 1995年 / 147卷
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A series of InGaAlAs/InP(001) heterostructures have been grown by MBE with misfit strains in the range -0.02 to 0.01. TEM studies show that composition modulations occur over a very wide range of InGaAlAs alloys. The composition fluctuations are unusual in that they can result in a highly asymmetric fine scale (3-17 nm) lamellar structure having either a (110) or (1(1) over bar0$) habit plane. AFM studies suggest that the InGaAlAs epilayers also exhibit larger scale unidirectional surface undulations.
引用
收藏
页码：373 / 376
页数：4
相关论文
共 50 条
  • [1] GROWTH MODES AND RELAXATION MECHANISMS OF STRAINED INGAAS LAYERS GROWN ON INP(001)
    GENDRY, M
    DROUOT, V
    SANTINELLI, C
    HOLLINGER, G
    MIOSSI, C
    PITAVAL, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04): : 1829 - 1834
  • [2] ELECTRON-MICROSCOPY STUDIES OF EPITAXIAL INGAALAS LAYERS GROWN ON INP(001) BY MOLECULAR-BEAM EPITAXY
    MURRAY, RT
    KIELY, CJ
    GOODHEW, PJ
    HOPKINSON, M
    ELECTRON MICROSCOPY AND ANALYSIS 1993, 1993, (138): : 309 - 312
  • [3] PROPERTIES OF THIN STRAINED LAYERS OF GAAS GROWN ON INP
    PISTOL, ME
    GERLING, M
    HESSMAN, D
    SAMUELSON, L
    PHYSICAL REVIEW B, 1992, 45 (07): : 3628 - 3635
  • [4] PERFECTION OF HOMOEPITAXIAL LAYERS GROWN ON (001) INP SUBSTRATES
    MAHAJAN, S
    KERAMAIDAS, VG
    CHIN, AK
    BONNER, WA
    BALLMAN, AA
    APPLIED PHYSICS LETTERS, 1981, 38 (04) : 255 - 258
  • [5] THE STRUCTURAL PROPERTIES OF ELASTICALLY STRAINED InGaAlAs/InGaAs/InP HETEROSTRUCTURES GROWN BY MOLECULAR BEAM EPITAXY
    Novikov, I. I.
    Babichev, A. V.
    Kolodeznyi, E. S.
    Kurochkin, A. S.
    Gladyshev, A. G.
    Karachinsky, L. Ya.
    Nevedomsky, V. N.
    Blokhin, S. A.
    Blokhin, A. A.
    Nadtochiy, A. M.
    Egorov, A. Yu.
    MATERIALS PHYSICS AND MECHANICS, 2016, 29 (01): : 76 - 81
  • [6] CRYSTAL DEFECTS IN INGAALAS LAYERS GROWN ON INP SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    BOCCHI, C
    FERRARI, C
    FRANZOSI, P
    GENOVA, F
    GLEICHMANN, R
    JENICHEN, B
    RIGO, C
    SALVIATI, G
    JOURNAL OF CRYSTAL GROWTH, 1990, 106 (04) : 665 - 672
  • [7] Strained GaInAs/InP MQW layers grown by CBE for optical components
    Vreeburg, CGM
    Oei, YS
    Verbeek, BH
    vanderTol, JJGM
    Rongen, RTH
    Vonk, H
    Leys, MR
    Dorren, BHP
    Wolter, JH
    JOURNAL OF CRYSTAL GROWTH, 1996, 164 (1-4) : 442 - 448
  • [8] Reciprocal lattice mapping of InGaAs layers grown on InP (001) and GaAs (001) substrates
    Bak-Misiuk, J
    Kaniewski, J
    Domagala, J
    Reginski, K
    Adamczewska, J
    Trela, J
    EPILAYERS AND HETEROSTRUCTURES IN OPTOELECTRONICS AND SEMICONDUCTOR TECHNOLOGY, 1999, 3725 : 47 - 52
  • [9] CHARACTERIZATION OF STRAINED IN0.54GA0.46AS LAYERS GROWN ON INP SUBSTRATES
    PEIRO, F
    VILA, A
    CORNET, A
    HERMS, A
    MORANTE, JR
    CLARK, S
    WILLIAMS, RH
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1991, (117): : 519 - 522
  • [10] SILICON STRAINED LAYERS GROWN ON GAP(001) BY MOLECULAR-BEAM EPITAXY
    MAREE, PMJ
    OLTHOF, RIJ
    FRENKEN, JWM
    VANDERVEEN, JF
    BULLELIEUWMA, CWT
    VIEGERS, MPA
    ZALM, PC
    JOURNAL OF APPLIED PHYSICS, 1985, 58 (08) : 3097 - 3103
12345