2-LEVEL SYSTEMS IN HYDROGENATED AMORPHOUS-SILICON - NMR-STUDIES

被引：9

|

作者：

BOYCE, JB

STUTZMANN, M

READY, SE

机构：

来源：

PHYSICAL REVIEW B | 1985年 / 32卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.32.6062

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：6062 / 6065

页数：4

相关论文

共 50 条

[1] NMR-STUDIES OF HYDROGEN MICROSTRUCTURES IN HYDROGENATED AMORPHOUS-SILICON FILMS
QU, XX
CHEN, KJ
CHEN, MR
HU, C
LI, ZF
FENG, D
[J]. ACTA PHYSICA SINICA-OVERSEAS EDITION, 1994, 3 (10): : 730 - 735
[2] AC CONDUCTION ORIGINATED FROM THE ATOMIC 2-LEVEL SYSTEMS IN HYDROGENATED AMORPHOUS-SILICON
SHIMAKAWA, K
WATANABE, A
IMAGAWA, O
[J]. SOLID STATE COMMUNICATIONS, 1985, 55 (03) : 245 - 248
[3] NMR INVESTIGATIONS OF HYDROGENATED AMORPHOUS-SILICON
REIMER, JA
[J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 715 - 724
[4] STRUCTURAL STUDIES OF HYDROGENATED AMORPHOUS-SILICON
KNIGHTS, JC
[J]. SOLAR CELLS, 1980, 2 (04): : 409 - 419
[5] OXIDATION STUDIES OF HYDROGENATED AMORPHOUS-SILICON
KELEMEN, SR
GOLDSTEIN, Y
ABELES, B
[J]. SURFACE SCIENCE, 1982, 116 (03) : 488 - 500
[6] INSITU STUDIES OF THE GROWTH OF HYDROGENATED AMORPHOUS-SILICON
DREVILLON, B
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 : 139 - 144
[7] DEEP-LEVEL DISTRIBUTIONS IN HYDROGENATED AMORPHOUS-SILICON
JOHNSON, NM
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 265 - 268
[8] CNDO APPROACH TO AMORPHOUS-SILICON AND TO HYDROGENATED AND FLUORINATED AMORPHOUS-SILICON
TAGUENAMARTINEZ, J
SANSORES, LE
CETINA, EA
[J]. PHYSICAL REVIEW B, 1983, 27 (04): : 2435 - 2438
[9] PROPERTIES OF BONDED HYDROGEN IN HYDROGENATED AMORPHOUS-SILICON AND OTHER HYDROGENATED AMORPHOUS-SILICON ALLOYS
LUCOVSKY, G
JING, Z
LU, Z
LEE, DR
WHITTEN, JL
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1995, 182 (1-2) : 90 - 102
[10] CAPACITANCE STUDIES OF DEEP DEFECTS IN HYDROGENATED AMORPHOUS-SILICON
COHEN, JD
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 : 381 - 386

← 1 2 3 4 5 →