INTERDIFFUSION PROFILES OF AUGE/N-GAAS OHMIC CONTACTS STUDIED BY AES

被引：3
|
作者：
JUNG, T
NEBAUER, E
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1983年 / 77卷 / 02期
关键词：
D O I：
10.1002/pssa.2210770274
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：K203 / K206
页数：4
相关论文
共 50 条
  • [1] BACKSCATTERING ANALYSIS OF AUGE-NI OHMIC CONTACTS OF N-GAAS
    COHEN, DD
    KALKUR, TS
    SUTHERLAND, GJ
    NASSIBIAN, AG
    [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) : 3100 - 3104
  • [2] AN IMPROVED AUGE OHMIC CONTACT TO N-GAAS
    NATHAN, MI
    HEIBLUM, M
    [J]. SOLID-STATE ELECTRONICS, 1982, 25 (10) : 1063 - 1065
  • [3] Ohmic contacts to n-GaAs nanowires
    Gutsche, C.
    Lysov, A.
    Regolin, I.
    Brodt, A.
    Liborius, L.
    Frohleiks, J.
    Prost, W.
    Tegude, F. -J.
    [J]. JOURNAL OF APPLIED PHYSICS, 2011, 110 (01)
  • [4] Regrowth of a GaAs layer for n-GaAs ohmic contacts
    [J]. 1600, (71):
  • [5] SELECTIVE FORMATION OF OHMIC CONTACTS TO N-GAAS
    YAMANE, Y
    TAKAHASHI, Y
    ISHII, H
    HIRAYAMA, M
    [J]. ELECTRONICS LETTERS, 1987, 23 (08) : 382 - 383
  • [6] OHMIC CONTACTS OF N-GAAS PREPARED BY AUGE LIQUID-METAL ION-SOURCE IMPLANTATION
    KANG, TW
    LEE, JJ
    KIM, SG
    HONG, CY
    KIM, TW
    KANG, SO
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1992, 133 (02): : 371 - 376
  • [7] ULTRA LOW RESISTANCE OHMIC CONTACTS TO N-GAAS
    STALL, R
    WOOD, CEC
    BOARD, K
    EASTMAN, LF
    [J]. ELECTRONICS LETTERS, 1979, 15 (24) : 800 - 801
  • [8] CHARACTERIZATION OF AUGE-BASED OHMIC CONTACTS TO N-GAAS FABRICATED USING ION-ASSISTED DEPOSITION
    MORGAN, SP
    MORGAN, DV
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (12) : 2278 - 2284
  • [9] Properties of Pd/Sn Ohmic contacts on n-GaAs
    Islam, MS
    McNally, PJ
    Cameron, DC
    Herbert, PAF
    [J]. JOURNAL OF MATERIALS PROCESSING TECHNOLOGY, 1998, 77 (1-3) : 42 - 49
  • [10] STABLE AND SHALLOW PDLN OHMIC CONTACTS TO N-GAAS
    WANG, LC
    WANG, XZ
    LAU, SS
    SANDS, T
    CHAN, WK
    KUECH, TF
    [J]. APPLIED PHYSICS LETTERS, 1990, 56 (21) : 2129 - 2131
12345