GROWTH AND CHARACTERIZATION OF EPITAXIAL CUBIC BORON-NITRIDE FILMS ON SILICON - COMMENT

被引：5
|
作者：
MCCARTY, KF
MILLS, MJ
MEDLIN, DL
FRIEDMANN, TA
机构：
[1] Sandia National Laboratories, Livermore
来源：
PHYSICAL REVIEW B | 1994年 / 50卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.50.8907
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We review the x-ray-diffraction and high-resolution transmission electron microscopy (HRTEM) data that Doll et al. [Phys. Rev. B 43, 6816 (1991)] used as evidence for the epitaxial growth of cubic boron nitride (cBN) on silicon (001) surfaces. The three reported x-ray-diffraction peaks do not provide unambiguous evidence for cBN due to potential interference from the graphitelike phase of BN and from artifacts of the silicon substrate. We provide an interpretation of their HRTEM image. Our interpretation does not provide support for an epitaxial cBN/Si relationship or the presence of cBN.
引用
收藏
页码：8907 / 8910
页数：4
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