Improvements on high voltage capacity and high temperature performances of Si-based Schottky potential barrier diode

In order to improve the reverse voltage capacity and low junction temperature characteristics of the traditional silicon-based Schottky diode, a Schottky diode with high reverse voltage capacity and high junction temperature was fabricated using ion implantation, NiPt60 sputtering, silicide-forming and other major technologies on an N-type silicon epitaxial layer of 10.6-11.4 mu m and (2.2-2.4) x 10(15) cm(3) doping concentration. The measurement results show that the junction temperature of the Schottky diode fabricated can reach 175 degrees C, that is 50 degrees C higher than that of the traditional one; the reverse voltage capacity V R can reach 112 V, that is 80 V higher than that of the traditional one; the leakage current is only 2 mu A and the forward conduction voltage drop is V-F = 0.71 V at forward current I-F = 3 A.