ELECTRON-STATES OF IMPLANTATION IMPURITY IN A4B6 SEMICONDUCTORS AND SEMIMETALS

被引：0

作者：

PANKRATOV, OA

POVAROV, PP

机构：

来源：

FIZIKA TVERDOGO TELA | 1985年 / 27卷 / 08期

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D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：2325 / 2333

页数：9

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[1] MANY-ELECTRON EFFECTS AND VACANCY CHARGE STATES IN A4B6 SEMICONDUCTORS
PANKRATOV, OA
POVAROV, PP
FIZIKA TVERDOGO TELA, 1988, 30 (03): : 880 - 882
[2] Properties of states of admixtures of a third group in A4B6 semiconductors
Vinogradov, V.S.
Soviet Physics - Lebedev Institute Reports (English Translation of Sbornik ″Kratkie Soobshcheniya po Fizike″. AN SSSR. Fizicheskii Institut im. P.N. Lebedeva), 1988, (10): : 1 - 4
[3] IMPURITY DIPOLE-INDUCED PHASE-TRANSITION IN A4B6 SEMICONDUCTORS
LITVINOV, VI
FIZIKA TVERDOGO TELA, 1987, 29 (07): : 2206 - 2209
[4] PHONON ATTENUATION IN SEMICONDUCTORS WITH MAGNETO-IMPURITY ELECTRON-STATES
ERMOLAEV, AM
FIZIKA TVERDOGO TELA, 1985, 27 (11): : 3300 - 3305
[5] USE OF SCANNING ELECTRON-MICROSCOPY IN THE STUDY OF A4B6 SEMICONDUCTORS
BRESCHI, R
CAMANZI, A
FANO, V
EUREM 88, VOLS 1-3: TUTORIALS, INSTRUMENTATION AND TECHNIQUES / PHYSICS AND MATERIALS / BIOLOGY, 1988, 93 : 121 - 122
[6] ELECTRON-STRUCTURE OF POINT-DEFECTS IN A4B6 SEMICONDUCTORS
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PANKRATOV, OA
ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI, 1985, 88 (01): : 280 - 293
[7] TEMPERATURE-DEPENDENCE OF ELECTRON DIELECTRIC PERMEABILITY OF A4B6 SEMICONDUCTORS
VOLKOV, BA
KUSHNIR, VP
FIZIKA TVERDOGO TELA, 1982, 24 (11): : 3293 - 3297
[8] USE OF SCANNING ELECTRON-MICROSCOPY IN THE STUDY OF A4B6 SEMICONDUCTORS
BRESCHI, R
CAMANZI, A
FANO, V
INSTITUTE OF PHYSICS CONFERENCE SERIES, 1988, (93): : 121 - 122
[9] THEORY OF ELECTRON-ENERGY SPECTRUM OF GROUP A4B6 SEMICONDUCTORS
VOLKOV, BA
PANKRATOV, OA
SAZONOV, AV
ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI, 1983, 85 (04): : 1395 - 1408
[10] SPIN SPLITTING IN A4B6 SEMIMAGNETIC SEMICONDUCTORS
ZASAVITSKII, II
SAZONOV, AV
FIZIKA TVERDOGO TELA, 1988, 30 (06): : 1669 - 1674

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