EXCITON DYNAMICS IN GAAS ALGAAS MULTIPLE QUANTUM-WELL STRUCTURES

被引：10
|
作者：
OBERHAUSER, D
KALT, H
SCHLAPP, W
NICKEL, H
KLINGSHIRN, C
机构：
[1] FORSCHUNGSINST DEUTSCH BUNDESPOST, W-6100 DARMSTADT, GERMANY
[2] MAX PLANCK INST FESTKORPERFORSCH, W-7000 STUTTGART 80, GERMANY
来源：
JOURNAL OF LUMINESCENCE | 1991年 / 48-9卷
关键词：
D O I：
10.1016/0022-2313(91)90226-L
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The negligible interface roughness in our GaAs/AlGaAs multiple quantum well structure (MQW) makes it possible to observe the luminescence of free heavy hole excitons. We get detailed information about relaxation and recombination processes of excitons in a MQW by the observation of the luminescence decay of free and donor-bound excitons with picosecond time resolution. Distinct deviations from an exponential decay can be attributed to the saturation of deep impurity levels, a slow cooling rate of the excitons and a delayed thermalization between various free and donor-bound exciton states.
引用
收藏
页码：717 / 720
页数：4
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