METAL NITRIDE SEMICONDUCTORS FOR OPTICAL APPLICATIONS

被引:0
|
作者
BRYDEN, WA
KISTENMACHER, TJ
WICKENDEN, DK
MORGAN, JS
WICKENDEN, AE
ECELBERGER, SA
POEHLER, TO
机构
来源
JOHNS HOPKINS APL TECHNICAL DIGEST | 1989年 / 10卷 / 01期
关键词
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:3 / 13
页数:11
相关论文
共 50 条
  • [1] Transition metal nitride films for optical applications
    Ribbing, CG
    Roos, A
    [J]. OPTICAL THIN FILMS V: NEW DEVELOPMENTS, 1997, 3133 : 148 - 162
  • [2] Optical properties of defects in nitride semiconductors
    Ingo Tischer
    Matthias Hocker
    Benjamin Neuschl
    Manfred Madel
    Martin Feneberg
    Martin Schirra
    Manuel Frey
    Manuel Knab
    Pascal Maier
    Thomas Wunderer
    Robert A. R. Leute
    Junjun Wang
    Ferdinand Scholz
    Johannes Biskupek
    Jörg Bernhard
    Ute Kaiser
    Ulrich Simon
    Levin Dieterle
    Heiko Groiss
    Erich Müller
    Dagmar Gerthsen
    Klaus Thonke
    [J]. Journal of Materials Research, 2015, 30 : 2977 - 2990
  • [3] Optical properties of defects in nitride semiconductors
    Tischer, Ingo
    Hocker, Matthias
    Neuschl, Benjamin
    Madel, Manfred
    Feneberg, Martin
    Schirra, Martin
    Frey, Manuel
    Knab, Manuel
    Maier, Pascal
    Wunderer, Thomas
    Leute, Robert A. R.
    Wang, Junjun
    Scholz, Ferdinand
    Biskupek, Johannes
    Bernhard, Joerg
    Kaiser, Ute
    Simon, Ulrich
    Dieterle, Levin
    Groiss, Heiko
    Mueller, Erich
    Gerthsen, Dagmar
    Thonke, Klaus
    [J]. JOURNAL OF MATERIALS RESEARCH, 2015, 30 (20) : 2977 - 2990
  • [4] Structural Investigations in Nitride Semiconductors for Optoelectronic Applications
    Ruterana, Pierre
    [J]. MECHANICS AND MATERIALS SCIENCE, 2018, : 842 - 847
  • [5] Nitride semiconductors for energy conversion in photonic applications
    Zakutayev, Andriy
    [J]. 2016 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE (ACP), 2016,
  • [6] Defects in and applications of III-V nitride semiconductors
    Morkoc, H
    [J]. PROCEEDINGS OF THE 13TH INTERNATIONAL CONFERENCE ON DEFECTS IN INSULATING MATERIALS - ICDIM 96, 1997, 239-2 : 119 - 143
  • [7] Potential applications of III-V nitride semiconductors
    Morkoc, H
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 43 (1-3): : 137 - 146
  • [8] Theoretical optical parameters for III-nitride semiconductors
    Pinto, ES
    de Paiva, R
    de Carvalho, LC
    Alves, HWL
    Alves, JLA
    [J]. MICROELECTRONICS JOURNAL, 2003, 34 (5-8) : 721 - 724
  • [9] Effects of nitrogen vacancy on optical properties of nitride semiconductors
    Yamaguchi, E
    Junnarkar, MR
    [J]. JOURNAL OF CRYSTAL GROWTH, 1998, 189 : 570 - 574
  • [10] Ultrathin metal layers to convert surface polarity of nitride semiconductors
    Nakayama, T
    Mikami, J
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2005, 242 (06): : 1209 - 1213