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- [2] DEPENDENCE OF 4.2 DEGREE K PIEZORESISTANCE OF P-TYPE INSB ON IMPURITY CONCENTRATION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (10): : 1349 - 1350
- [4] MECHANISMS OF SCATTERING OF HOLES IN P-TYPE INSB DOPED WITH TRANSITION-ELEMENTS OF IRON GROUP SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (04): : 526 - 527
- [6] MAGNETIC FREEZEOUT OF HOLES IN UNIAXIALLY DEFORMED P-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (07): : 734 - 737
- [7] FIELD-DEPENDENCE OF HALL-COEFFICIENT OF P-TYPE INSB IN REGION OF IMPURITY SCATTERING OF HOLES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (10): : 1756 - 1757
- [10] PIEZORESISTANCE IN P-TYPE GALLIUM ANTIMONIDE PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 31 (01): : 227 - 234