PASSIVE COUPLING OF INGAASP/INP LASER ARRAY AND SINGLEMODE FIBERS USING SILICON WAFERBOARD

被引:59
|
作者
ARMIENTO, CA
TABASKY, M
JAGANNATH, C
FITZGERALD, TW
SHIEH, CL
BARRY, V
ROTHMAN, M
NEGRI, A
HAUGSJAA, PO
LOCKWOOD, HF
机构
[1] GTE Laboratories, Waltham, Massachusetts, 40 Sylvan Road
关键词
OPTICAL FIBERS; OPTICAL CONNECTORS AND COUPLERS; SEMICONDUCTOR LASERS; OPTICAL COMMUNICATION;
D O I
10.1049/el:19910689
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Passive alignment of semiconductor lasers and singlemode fibres has been achieved for the first time using a micro-machined silicon subtrate. Mechanical alignment features fabricated on the substrate surface were used to align the active regions of an InGaAsP/InP laser array to four singlemode fibres held in V grooves. Optical coupling efficiencies have been achieved that are comparable to values obtained using the conventional technique of active fibre manipulation. The approach, called silicon waferboard, offers the potential for low-cost optoelectronic device packaging as well as a means for dense hybrid integration of optoelectronic, electronic and optical components required for multifibre, multichip systems.
引用
收藏
页码:1109 / 1111
页数:3
相关论文
共 50 条
  • [1] Marker alignment method for passive laser coupling on silicon waferboard
    Sasaki, S
    Nakagawa, G
    Tanaka, K
    Miura, K
    Yano, M
    [J]. IEICE TRANSACTIONS ON COMMUNICATIONS, 1996, E79B (07) : 939 - 942
  • [2] COMPACT INGAASP/INP LASER-DIODES WITH INTEGRATED-MODE EXPANDER FOR EFFICIENT COUPLING TO FLAT-ENDED SINGLEMODE FIBERS
    BRENNER, T
    HESS, R
    MELCHIOR, H
    [J]. ELECTRONICS LETTERS, 1995, 31 (17) : 1443 - 1445
  • [3] Efficient Active-to-Passive Light Coupling of InGaAsP/InP Laser Using Subwavelength Coupler
    Liang, Xiaojun
    Mu, Jianwei
    Li, Xun
    Xi, Yanping
    [J]. IEEE PHOTONICS JOURNAL, 2013, 5 (06):
  • [4] INGAASP/INP TAPERED ACTIVE LAYER MULTIQUANTUM-WELL LASER WITH 1.8-DB COUPLING LOSS TO CLEAVED SINGLEMODE FIBER
    LEALMAN, IF
    RIVERS, LJ
    HARLOW, MJ
    PERRIN, SD
    [J]. ELECTRONICS LETTERS, 1994, 30 (20) : 1685 - 1687
  • [5] INGAASP/INP DUAL-WAVELENGTH BH LASER ARRAY
    NAGAI, H
    SUZUKI, Y
    NOGUCHI, Y
    [J]. ELECTRONICS LETTERS, 1982, 18 (09) : 371 - 372
  • [6] Single-step growth of InGaAsP/InP laser array on patterned InP substrate
    Rakovics, V
    Serényi, M
    Püspöki, S
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 23 (3-4): : 334 - 338
  • [7] 1.56-MU-M INGAASP/INP TAPERED ACTIVE LAYER MULTIQUANTUM-WELL LASER WITH IMPROVED COUPLING TO CLEAVED SINGLEMODE FIBER
    LEALMAN, IF
    RIVERS, LJ
    HARLOW, MJ
    PERRIN, SD
    ROBERTSON, MJ
    [J]. ELECTRONICS LETTERS, 1994, 30 (11) : 857 - 859
  • [8] Influence of operating temperature on passive mode locking of InGaAsP/InP laser diode
    Tan, WK
    Wong, H
    Kelly, AE
    Sorel, M
    Marsh, JH
    Bryce, AC
    [J]. 2005 IEEE LEOS Annual Meeting Conference Proceedings (LEOS), 2005, : 870 - 871
  • [9] PHASE-LOCKED INGAASP LASER ARRAY WITH DIFFRACTION COUPLING
    CHEN, TR
    YU, KL
    MARGALIT, S
    YARIV, A
    [J]. APPLIED SCIENTIFIC RESEARCH, 1984, 41 (3-4): : 301 - 303
  • [10] PHASE-LOCKED INGAASP LASER ARRAY WITH DIFFRACTION COUPLING
    CHEN, TR
    YU, KL
    CHANG, B
    HASSON, A
    MARGALIT, S
    YARIV, A
    [J]. APPLIED PHYSICS LETTERS, 1983, 43 (02) : 136 - 137