DOUBLE-GATE SILICON-ON-INSULATOR TRANSISTOR WITH VOLUME INVERSION - A NEW DEVICE WITH GREATLY ENHANCED PERFORMANCE

被引：569
|
作者：
BALESTRA, F
CRISTOLOVEANU, S
BENACHIR, M
BRINI, J
ELEWA, T
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 09期
关键词：
D O I：
10.1109/EDL.1987.26677
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：410 / 412
页数：3
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