PHOTOLUMINESCENCE AND RAMAN STUDIES OF POROUS SILICON UNDER VARIOUS TEMPERATURES AND LIGHT ILLUMINATIONS

被引：18
|
作者：
CHANG, CS
LUE, JT
机构：
[1] Department of Physics, National Tsing Hua University, Hsinchu
来源：
THIN SOLID FILMS | 1995年 / 259卷 / 02期
关键词：
ANODIC OXIDATION; NANOSTRUCTURES; RAMAN SCATTERING; SILICON;
D O I：
10.1016/0040-6090(94)06448-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The detailed photoluminescence (PL), Raman and infrared absorption spectra of porous silicon (PS) prepared at different anodization current densities, annealing conditions and light illumination durations are studied. The intricate spectra imply diverse mechanisms to address the origin. We suggest that the quantum confinement effect of PS determines the blue-shift of the spectra, and that the breaking of Si-H-x bonds on the porous walls degrades the PL intensity.
引用
收藏
页码：275 / 280
页数：6
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