SINGLE-ELECTRON MEMORY

被引：75

作者：

NAKAZATO, K ^{[1
]}

BLAIKIE, RJ ^{[1
]}

CLEAVER, JRA ^{[1
]}

AHMED, H ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,CAVENDISH LAB,MICROELECTR RES CTR,CAMBRIDGE CB3 0HE,ENGLAND

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 04期

关键词：

MEMORIES; TUNNELING; SEMICONDUCTOR DEVICES;

D O I：

10.1049/el:19930258

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A single-electron memory cell in which one bit of information is represented by +n and -n electron number states, is described. An experimental memory circuit for n congruent-to 100 was fabricated and the basic operation was confirmed at a temperature of 30 mK. This structure can be modified to operate with n = 1.

引用

页码：384 / 385

页数：2

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