TEMPERATURE-DEPENDENCE OF SURFACE AND BULK ABSORPTION IN NACL AND KCL AT 10.6 MU-M

被引：7

作者：

ROWE, JM ^{[1
]}

HARRINGTON, JA ^{[1
]}

机构：

[1] UNIV ALABAMA,HUNTSVILLE,AL 35807

来源：

PHYSICAL REVIEW B | 1976年 / 14卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.14.5442

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5442 / 5450

页数：9

共 50 条

[1] DAMAGE THRESHOLDS AT 10.6 MU-M FOR NACL AND KCL
REICHELT, WH
STARK, E
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1974, QE10 (09) : 734 - 734
[2] OPTICAL-BREAKDOWN IN NACL AND KCL FROM 0.53 TO 10.6 MU-M
SOILEAU, MJ
BASS, M
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (05) : 370 - 371
[3] ROUND ROBIN ON CALORIMETRIC MEASUREMENT OF 10.6 MU-M ABSORPTION IN KCL
LIPSON, HG
LIGOR, PA
[J]. ELECTRO-OPTICAL SYSTEMS DESIGN, 1978, 10 (11): : 56 - 62
[4] SURFACE AND BULK ABSORPTION IN GERMANIUM AT 10.6-MU-M
HUTCHINSON, CJ
LEWIS, C
SAVAGE, JA
PITT, A
[J]. APPLIED OPTICS, 1982, 21 (08) : 1490 - 1495
[5] SURFACE-ABSORPTION IN KCL AND CAF2 AT 2.8 MU-M AND 3.8 MU-M
HARRINGTON, JA
[J]. APPLIED OPTICS, 1979, 18 (15): : 2534 - 2536
[6] DETERMINATION OF THE TEMPERATURE-DEPENDENCE OF THE FREE CARRIER AND INTERBAND ABSORPTION IN SILICON AT 1.06 MU-M
SVANTESSON, KG
NILSSON, NG
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (18): : 3837 - 3842
[7] TEMPERATURE-DEPENDENCE OF ATMOSPHERIC ABSORPTION IN THE WAVELENGTH RANGE 8-14 MU-M
ZAVODY, AM
EMERY, RJ
GEBBIE, HA
[J]. NATURE, 1979, 277 (5696) : 462 - 463
[8] HIGH-TEMPERATURE ABSORPTION IN CO2 AT 10.6 MU-M
STRILCHUK, AR
OFFENBERGER, AA
[J]. APPLIED OPTICS, 1974, 13 (11) : 2643 - 2646
[9] TEMPERATURE-DEPENDENCE OF OPTICAL-ABSORPTION AT LAMBDA=1.06 MU-M IN AMORPHOUS AND CRYSTALLINE SILICON
SIREGAR, MRT
ALLMEN, MV
LUTHY, W
[J]. HELVETICA PHYSICA ACTA, 1979, 52 (01): : 45 - 48
[10] ABSORPTION OF THIN-FILM MATERIALS AT 10.6 MU-M
GIBBS, WEK
BUTTERFIELD, AW
[J]. APPLIED OPTICS, 1975, 14 (12): : 3043 - 3046

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