NEW GENERATION MMIC AMPLIFIER USING INGAAS/INALAS HEMTS

被引：4
|
作者：
WEISS, M
NG, GI
PAVLIDIS, D
机构：
[1] Center for High Frequency Microelectronics, Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Michigan, Ann Arbor
来源：
ELECTRONICS LETTERS | 1990年 / 26卷 / 04期
关键词：
Gallium arsenide; Indium compounds; Microwave amplifiers; Semiconductor devices and materials;
D O I：
10.1049/el:19900176
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An InP based monolithic integrated technology has been developed using InGaAs/InAlAs HEMTs and is applied for the first time to the realisation of a two-stage amplifier. The gain has a peak of 18.4dB at 6.4GHz and exceeds 15dB from 6.0 to 9.5GHz. © 1990, The Institution of Electrical Engineers. All rights reserved.
引用
收藏
页码：264 / 266
页数：3
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