共 50 条
- [2] LOW-ENERGY ION DOPING OF GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1421 - 1424
- [4] LOW-ENERGY ION INDUCED DAMAGE IN GAAS [J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 292 - 292
- [5] EFFECTS OF LOW-ENERGY AR+ ION-BOMBARDMENT ON GAAS [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1991, 9 (04): : 489 - 500
- [6] ION-BEAM DAMAGE EFFECTS DURING THE LOW-ENERGY CLEANING OF GAAS [J]. ELECTRON DEVICE LETTERS, 1982, 3 (02): : 48 - 50
- [7] EFFECTS OF LOW-ENERGY ION EXPOSURE ON MODULATION-DOPED GAAS HETEROSTRUCTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (06): : 2592 - 2596
- [8] CONICAL DISTRIBUTIONS OF LOW-ENERGY ION FLUXES AT SYNCHRONOUS ORBIT [J]. JOURNAL OF GEOPHYSICAL RESEARCH-SPACE PHYSICS, 1980, 85 (NA5): : 2057 - 2064
- [9] EFFECTS OF LOW-ENERGY ION-BOMBARDMENT ON GAAS MOLECULAR-BEAM EPITAXY [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 : 332 - 335
- [10] LOW-ENERGY CHLORINE-ION INTERACTION ON GAAS(001) [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 42 (03): : 334 - 341