NONLINEAR FAR-INFRARED ABSORPTION IN INSB DUE TO LIGHT IMPACT IONIZATION

被引：18

作者：

GANICHEV, SD ^{[1
]}

DIENER, J ^{[1
]}

PRETTL, W ^{[1
]}

机构：

[1] AF IOFFE PHYS TECH INST, ST PETERSBURG 194021, RUSSIA

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 15期

关键词：

D O I：

10.1063/1.111712

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A highly nonlinear far-infrared free-carrier absorption, rising with the radiation intensity, has been observed in InSb. It is shown that the nonlinearity arises from an increase in the number of free carriers caused by the generation of electron-hole pairs by light impact ionization in the radiation field of a powerful far-infrared laser. The observed nonlinearity permits the investigation of the process of impact ionization by a contactless optical method.

引用

页码：1977 / 1979

页数：3

共 50 条

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