HIGH EFFICIENT GAALAS LIGHT-EMITTING-DIODES OF 660 NM WITH A DOUBLE HETEROSTRUCTURE ON A GAALAS SUBSTRATE

被引：25
|
作者：
ISHIGURO, H
SAWA, K
NAGAO, S
YAMANAKA, H
KOIKE, S
机构：
来源：
APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 11期
关键词：
D O I：
10.1063/1.94220
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：1034 / 1036
页数：3
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