共 16 条
- [1] SPECTRUM OF LOCALIZED STATES NEAR THE FUNDAMENTAL ABSORPTION EDGE AND LIKELY MECHANISM OF COMPENSATION OF CdTe:Cl CRYSTALS.Soviet physics. Semiconductors, 1983, 17 (03): : 245 - 247Agrinskaya, N.V.Matveev, O.A.
- [2] PHOTOCONDUCTIVITY OF CDTE SINGLE-CRYSTALS IN THE REGION OF THE FUNDAMENTAL ABSORPTION-EDGESOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (03): : 252 - 255BAIDULLAEVA, ADYAKIN, VVKOVAL, VVLYUBCHENKO, AVMOZOL, PESALKOV, EA
- [3] SPECTRUM OF PHOTOCAPACITANCE CURRENT NEAR FUNDAMENTAL ABSORPTION-EDGE OF GEPHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 38 (01): : 349 - 354MISHCHENKO, AMNEIZVESTNYI, IGSINYUKOV, MP
- [4] OPTICAL-PROPERTIES OF LEAD GERMANATE CRYSTALS NEAR THE FUNDAMENTAL ABSORPTION-EDGEFIZIKA TVERDOGO TELA, 1985, 27 (03): : 932 - 934MIKHNEVICH, VVMIKULENOK, AVMYASOEDOV, AV
- [5] INFLUENCE OF DEFECTS ON OPTICAL BEHAVIOR OF TGS CRYSTALS NEAR FUNDAMENTAL ABSORPTION-EDGEPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1973, 19 (02): : 717 - 723HILCZER, BBALANICKA, S
- [6] FERMI LEVEL PINNING IN THE MIDDLE OF THE BAND-GAP IN CDTE-CL CRYSTALS - ROLE OF DEEP LOCALIZED STATESNUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1989, 283 (02): : 260 - 262AGRINSKAYA, NVARKADEVA, EN
- [7] FERMI LEVEL PINNING IN THE MIDDLE OF THE BAND-GAP IN CDTE-CL CRYSTALS - ROLE OF DEEP LOCALIZED STATESPHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1987, 143 (02): : K103 - K106AGRINSKAYA, NVARKADEVA, EN
- [8] ABSORPTION SPECTRUM OF TRIGONAL SELENIUM SINGLE CRYSTALS NEAR FUNDAMENTAL EDGEPHYSICA STATUS SOLIDI, 1969, 31 (02): : K139 - &FISCHER, R
- [9] REFLECTION SPECTRUM OF GASE AND GAS SINGLE CRYSTALS NEAR FUNDAMENTAL ABSORPTION EDGEPHYSICA STATUS SOLIDI, 1967, 19 (02): : K111 - +NIZAMETDINOVA, MA
- [10] PHOTOCONDUCTIVITY OF ZINC-SULFIDE CRYSTALS EXCITED WITH LASER-RADIATION NEAR FUNDAMENTAL ABSORPTION-EDGESOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (02): : 127 - 129MYLNIKOV, VSKOZYREV, VK