NEW GRADING LAYER FOR LIQUID EPITAXIAL-GROWTH OF GAXIN1-XAS ON GAAS SUBSTRATE

被引：24

作者：

NAGAI, H ^{[1
]}

NOGUCHI, Y ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1975年 / 26卷 / 03期

关键词：

D O I：

10.1063/1.88082

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：108 / 110

页数：3

共 50 条

[1] PREPARATION OF EPITAXIAL GAXIN1-XAS
CONRAD, RW
HOYT, PL
MARTIN, DD
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (2P1) : 164 - &
[2] BIFACIAL LPE GROWTH OF GAXIN1-XAS
NAGAI, H
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[J]. JOURNAL OF CRYSTAL GROWTH, 1976, 34 (01) : 120 - 124
[3] EPITAXY OF MISMATCHED GAXIN1-XAS ON INP SUBSTRATE
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LECROSNIER, D
[J]. VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1988, 43 (241): : 205 - 206
[4] LOW-TEMPERATURE PHOTOLUMINESCENCE OF GAXIN1-XAS GAAS STRAINED LAYER SUPERLATTICES
ROTH, AP
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LEPAGE, Y
SPROULE, GI
MITCHELL, DF
[J]. SUPERLATTICES AND MICROSTRUCTURES, 1986, 2 (06) : 507 - 512
[5] GROWTH OF GAXIN1-XAS ON (100) INP BY LIQUID-PHASE EPITAXY
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[J]. APPLIED PHYSICS LETTERS, 1978, 32 (08) : 497 - 499
[6] A THERMODYNAMIC APPROACH FOR THE VAPOR-PHASE EPITAXIAL-GROWTH OF GAXIN1-XAS FROM A GA-IN-H-CL-AS SYSTEM
MANI, VN
DHANASEKARAN, R
RAMASAMY, P
[J]. JOURNAL OF CRYSTAL GROWTH, 1990, 99 (1-4) : 333 - 340
[7] GAXIN1-XP LIQUID-PHASE EPITAXIAL-GROWTH ON (100) GAAS SUBSTRATES
ASAI, H
OE, K
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 6849 - 6851
[8] LIQUID-PHASE EPITAXIAL-GROWTH OF INXGA1-XAS ON GAAS AND GAAS1-XSBX ON GAAS
AKITA, K
NISHITANI, Y
YAMAGUCHI, A
[J]. FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, 1979, 15 (01): : 109 - 122
[9] THERMODYNAMICAL ANALYSIS FOR VAPOR GROWTH OF GAXIN1-XAS CRYSTALS
NAGAI, H
SHIBATA, T
OKAMOTO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (10) : 1337 - &
[10] MECHANISTIC ASPECTS RELATING TO THE GROWTH OF GAXIN1-XAS BY CBE
FRENCH, CL
WEE, ATS
FOORD, JS
DAVIES, GJ
[J]. JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 1038 - 1039

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