THE GEOMETRY OF A GATE-CONTROLLED N-N+-N GAAS WIRE

被引:0
|
作者
RODHE, PM
ROUHANIKALLEH, A
ANDERSSON, TG
机构
关键词
D O I
10.1088/0268-1242/3/8/017
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:823 / 825
页数:3
相关论文
共 50 条
  • [1] The gate-controlled graphite p-n junction
    20144900293728
    [J]. (1) Ministerial Key Laboratory of JGMT, School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing, China; (2) Electrical and Computer Engineering, Department University of Waterloo, Waterloo, Canada, Future University Hakodate; IEEE Sapporo Section; Xiamen University (Institute of Electrical and Electronics Engineers Inc., United States):
  • [2] The Gate-controlled Graphite p-n Junction
    Liu, Jingping
    Zhao, Huichang
    Safavi-Naeini, Safieddin
    Ban, Dayan
    [J]. 2014 INTERNATIONAL CONFERENCE ON INFORMATION SCIENCE, ELECTRONICS AND ELECTRICAL ENGINEERING (ISEEE), VOLS 1-3, 2014, : 1081 - +
  • [3] GATE-CONTROLLED SURFACE BREAKDOWN IN SILICON P-N JUNCTIONS
    GRAAFF, HCD
    [J]. PHILIPS RESEARCH REPORTS, 1970, 25 (01): : 21 - +
  • [4] Quantum hall effect in a gate-controlled p-n junction of graphene
    Williams, J. R.
    DiCarlo, L.
    Marcus, C. M.
    [J]. SCIENCE, 2007, 317 (5838) : 638 - 641
  • [5] Gate-Controlled P-I-N Junction Switching Device with Graphene Nanoribbon
    Nakaharai, Shu
    Iijima, Tomohiko
    Ogawa, Shinichi
    Miyazaki, Hisao
    Li, Songlin
    Tsukagoshi, Kazuhito
    Sato, Shintaro
    Yokoyama, Naoki
    [J]. APPLIED PHYSICS EXPRESS, 2012, 5 (01)
  • [6] The Gate-Controlled Spin Transport of Electrons in a Quantum Wire: Effects of Different Geometry of Gates
    Park, Dae Han
    Kim, Heesang
    Kim, Nammee
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2019, 256 (06):
  • [7] Gate-controlled rectification and broadband photodetection in a P-N diode based on TMDC heterostructures
    Elahi, Ehsan
    Nisar, Sobia
    Rabeel, Muhammad
    Rehman, Malik Abdul
    Ouladsamne, Mohamed
    Irfan, Ahmad
    Abubakr, Muhammad
    Aziz, Jamal
    Asim, Muhammad
    Dastgeer, Ghulam
    [J]. MATERIALS ADVANCES, 2024, 5 (03): : 1226 - 1233
  • [8] A Novel SNOS Gate-Controlled, Normally-Off p-i-n Switch
    Zhou, Xianda
    Feng, Hao
    Sin, Johnny K. O.
    [J]. IEEE ELECTRON DEVICE LETTERS, 2014, 35 (01) : 111 - 113
  • [9] INTERFACE GEOMETRY OF (GAAS)N(INAS)N AND (GAP)N(INP)N ULTRA-THIN SUPERLATTICES
    DEFIGUEIREDO, SK
    FERRAZ, AC
    [J]. APPLIED SURFACE SCIENCE, 1989, 41-2 : 509 - 511
  • [10] Gate-controlled transport in GaN nanowire devices with high-k Si3N4 gate dielectrics
    Lee, Jae-Woong
    Ham, Moon-Ho
    Myoung, Jae-Min
    [J]. SOLID STATE COMMUNICATIONS, 2008, 145 (7-8) : 327 - 331