LOW-TEMPERATURE ELECTRONIC TRANSPORT-PROPERTIES IN THIN-FILMS OF PD AND PDH0.3

被引:0
|
作者
FLOUDA, E
PAPASTAIKOUDIS, C
机构
[1] Institute for Materials Science, National Center for Scientific Research, Democritos, Attiki, Athens
来源
PHYSICAL REVIEW B | 1994年 / 50卷 / 16期
关键词
D O I
10.1103/PhysRevB.50.11967
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Low-temperature magnetoresistance measurements have been used to determine various electron scattering times in pure Pd and PdH0.3 thin films with different thicknesses, which have been prepared by electron-gun evaporation. From low-field magnetoresistance measurements, using localization theory, the spin-flip, electron-electron, and electron-phonon relaxation times can be deduced and they are found to depend on the electronic structure of both systems. It is also found that the increase of the disorder of the systems enhances the spin-orbit coupling, which is larger in PdH0.3 than in Pd. On the other hand, the high-field magnetoresistance allows the determination of both the Coulomb screening factor F and the Landé factor g for both systems. It is found that the F factor depends on the band structure and takes the mean values 0.63 and 0.53 for pure Pd and PdH0.3, respectively, while the g factor depends on the degree of disorder. © 1994 The American Physical Society.
引用
收藏
页码:11967 / 11975
页数:9
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