共 50 条
- [3] Temperature dependent model for hole effective mass in heavily doped p-type SiGe Journal De Physique. IV : JP, 1996, 6 (03): : 137 - 142
- [4] Temperature dependent model for hole effective mass in heavily doped p-type SiGe JOURNAL DE PHYSIQUE IV, 1996, 6 (C3): : 137 - 142
- [5] Temperature-dependent Hall-effect measurements of p-type multicrystalline compensated solar grade silicon PROGRESS IN PHOTOVOLTAICS, 2013, 21 (07): : 1469 - 1477
- [8] Resistivity and surface states density of n- and p-type silicon nanowires JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2008, 26 (03): : 945 - 948
- [9] SPECTRA OF SURFACE STATES IN P-TYPE SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (08): : 992 - 994