REACTIVE ION-BEAM DEPOSITION OF ALUMINUM NITRIDE THIN-FILMS

被引：12

作者：

BHAT, S ^{[1
]}

ASHOK, S ^{[1
]}

FONASH, SJ ^{[1
]}

TONGSON, L ^{[1
]}

机构：

[1] PENN STATE UNIV,ENGN SCI PROGRAM,UNIVERSITY PK,PA 16802

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1985年 / 14卷 / 04期

关键词：

CAPACITORS - ION BEAMS - SPUTTERING;

D O I：

10.1007/BF02654015

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Aluminum nitride thin films have been prepared at room temperature by reactive ion beam sputtering for potential use as a passivant and diffusion/anneal cap in compound semiconductor technology. The electrical and optical properties of these films have been studied along with the influence of thermal annealing on the material characteristics. The quality of the films has also been found to improve in the presence of atomic hydrogen during the deposition.

引用

页码：405 / 418

页数：14

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