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- [1] CHARACTERIZATION OF GRADED INTERFACE INXGA1-XAS/IN0.52AL0.48AS (0.53-LESS-THAN-X-LESS-THAN-0.70) STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXYJOURNAL OF APPLIED PHYSICS, 1987, 62 (07) : 2880 - 2884PENG, CKSINHA, SMORKOC, H
- [2] THE GROWTH OF HIGHLY MISMATCHED INXGA1-XAS (0.28-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1) ON GAAS BY MOLECULAR-BEAM EPITAXYJOURNAL OF APPLIED PHYSICS, 1993, 73 (10) : 4916 - 4926CHANG, SZCHANG, TCLEE, SC
- [3] DISLOCATION GENERATION MECHANISMS OF INXGA1-XAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1) EPILAYERS GROWN ON (100) INP SUBSTRATES BY MOLECULAR-BEAM EPITAXYJOURNAL OF APPLIED PHYSICS, 1994, 75 (03) : 1511 - 1516CHANG, SZLEE, SCCHEN, CRCHEN, LJ
- [4] MOLECULAR-BEAM EPITAXY OF INXGA1-XSB (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1)JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (02) : 387 - 388YANO, MTAKASE, TKIMATA, M
- [5] PROPERTIES OF GRADED INXO-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.5GA1-XAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXYSEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1995, 10 (02) : 167 - 171HAUSLER, KEBERL, KSIGLE, W
- [6] GROWTH AND CHARACTERIZATION OF INXGA1-XAS ON SI BY MOLECULAR-BEAM EPITAXYJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (02): : 258 - 260CHENG, KYHSIEH, KCBAILLARGEON, JN
- [7] PHOTOLUMINESCENCE OF THE RESIDUAL SHALLOW ACCEPTOR IN INXGA1-XAS GROWN ON GAAS(001) BY MOLECULAR-BEAM EPITAXYSOLID STATE COMMUNICATIONS, 1989, 70 (05) : 505 - 509XU, ZYXU, JZANDERSSON, TGCHEN, ZG
- [8] ULTRAUNIFORM INXGA1-XAS LAYERS ON INP GROWN BY MOLECULAR-BEAM EPITAXYJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 528 - 530MATSUI, YHAYASHI, HKIKUCHI, KIGUCHI, SYOSHIDA, K
- [9] CHARACTERIZATION OF INXGA1-XP/GAAS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY (0.35-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.60) BY SPECTROSCOPIC ELLIPSOMETRYJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02): : 962 - 965BISWAS, DLEE, HSALVADOR, AKLEIN, MVMORKOC, H
- [10] GALVANOMAGNETIC PROPERTIES OF 2-DIMENSIONAL ELECTRON GASES IN STRAIN RELAXED INXGA1-XAS (X-LESS-THAN-0.40) HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS SUBSTRATESJOURNAL OF ELECTRONIC MATERIALS, 1994, 23 (12) : 1297 - 1302FERNANDEZ, JMCHEN, JHWIEDER, HH