Modelling of semiconductor laser structures for passive harmonic mode locking at terahertz frequencies

被引：0
|
作者：
Avrutin, EA
Marsh, JH
Arnold, JM
机构：
来源：
INTERNATIONAL JOURNAL OF OPTOELECTRONICS | 1995年 / 10卷 / 06期
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暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A distributed time-domain model and an approximate frequency-domain theory ave used to analyse subpicosecond pulse generation by a compound-cavity laser diode with an internal reflector (IR) and a saturable absorber included in the cavity. It is shown that fast nonlinearities in the absorber are likely to be responsible for mode locking at frequencies above 1 THz. Factors limiting the laser performance, such as gain dispersion, magnitude and relaxation time of fast nonlinearities, and IR reflectance and position, are discussed.
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页码：427 / 432
页数：6
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