Long wavelength photoresponse of short period InAs/GaSb superlattices

被引：0
|
作者：
Lakrimi, M
Vaughan, TA
Nicholas, RJ
Mason, NJ
Walker, PJ
机构：
来源：
NARROW GAP SEMICONDUCTORS 1995 | 1995年 / 144期
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中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We have performed interband photoconductivity experiments at 2 K on a series of superlattices with different layer thicknesses. We show that the band gap is indeed tunable and measure values ranging from 5 to 20 mu m for the first time on samples grown by metal-organic vapour phase epitaxy. An 8 band k.p calculation is used to estimate the band gap and also to fit the interband Landau level transitions throughout the semiconducting layer thicknesses range.
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页码：287 / 291
页数：5
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