NOVEL LINEARIZATION TECHNIQUE FOR IMPLEMENTING LARGE-SIGNAL MOS TUNABLE TRANSCONDUCTOR

被引：30
|
作者：
WANG, Z
机构：
[1] Institute of Electronics, Department of Electrical Engineering, Swiss Federal Institute of Technology
来源：
ELECTRONICS LETTERS | 1990年 / 26卷 / 02期
关键词：
Circuit theory and design; MOS structures and devices; Transisto;
D O I：
10.1049/el:19900094
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel linearisation technique for exploiting the inherent square-law characteristics to implement a large-signal tunable transconductor with high linearity in MOS technology is presented. Three transconductors implemented using this technique are discussed and compared. Simulation and experimental results are given. © 1990, The Institution of Electrical Engineers. All rights reserved.
引用
收藏
页码：138 / 139
页数：2
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