ELECTRICAL-PROPERTIES OF INDIUM ARSENIDE IRRADIATED WITH FAST-NEUTRONS

被引:0
|
作者
KOLIN, NG
OSVENSKII, VB
RYTOVA, NS
YUROVA, ES
机构
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1987年 / 21卷 / 03期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:320 / 321
页数:2
相关论文
共 50 条
  • [1] ELECTRICAL-PROPERTIES OF INSB IRRADIATED WITH FAST-NEUTRONS
    BARAMIDZE, NV
    BONCH-BRUEVICH, VL
    GIORGADZE, MP
    KURDIANI, NI
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1982, 110 (01): : 33 - 37
  • [2] FRANZ-KELDYSH EFFECT IN GALLIUM-ARSENIDE IRRADIATED WITH FAST-NEUTRONS
    BARAMIDZE, NV
    KURDIANI, NI
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (03): : 424 - 424
  • [3] OPTICAL-PROPERTIES OF MGO IRRADIATED BY FAST-NEUTRONS
    OKADA, M
    SEIYAMA, T
    ICHIHARA, C
    NAKAGAWA, M
    [J]. JOURNAL OF NUCLEAR MATERIALS, 1985, 133 (AUG) : 745 - 748
  • [4] INFLUENCE OF FAST-NEUTRONS ON ELECTRICAL-PROPERTIES IN NEUTRON TRANSMUTATION DOPED GAAS - NEW ANNEALING STAGE
    SATOH, M
    KURIYAMA, K
    YAHAGI, M
    IWAMURA, K
    KIM, C
    KAWAKUBO, T
    YONEDA, K
    KIMURA, I
    [J]. APPLIED PHYSICS LETTERS, 1987, 50 (10) : 580 - 582
  • [5] THE DOSIMETRY OF BONE IRRADIATED BY FAST-NEUTRONS
    MONTELIUS, A
    BURLIN, TE
    [J]. PHYSICS IN MEDICINE AND BIOLOGY, 1986, 31 (09): : 955 - 965
  • [6] MAGNETIC-PROPERTIES OF BARIUM HEXAFERRITES IRRADIATED BY FAST-NEUTRONS
    CHUKALKIN, YG
    PETROV, VV
    GOSHITSKII, BN
    [J]. INORGANIC MATERIALS, 1979, 15 (07) : 1023 - 1024
  • [7] MICROHARDNESS AND PHOTOMECHANICAL EFFECT OF GALLIUM-ARSENIDE SINGLE-CRYSTALS IRRADIATED WITH FAST-NEUTRONS
    SIROTA, NN
    KURILOVICH, NF
    BEREZINA, GM
    [J]. DOKLADY AKADEMII NAUK BELARUSI, 1975, 19 (10): : 880 - 882
  • [8] THEORY OF SWELLING OF METALS IRRADIATED WITH FAST-NEUTRONS
    KONOBEEV, YV
    SUBBOTIN, AV
    [J]. SOVIET ATOMIC ENERGY-USSR, 1971, 31 (03): : 949 - &
  • [9] ABOUT TRIBOLUMINESCENCE OF SILICA IRRADIATED BY FAST-NEUTRONS
    ZUBOV, VG
    ZAKHAROVA, EK
    OSIPOVA, LP
    [J]. VESTNIK MOSKOVSKOGO UNIVERSITETA SERIYA 3 FIZIKA ASTRONOMIYA, 1975, 16 (03): : 366 - 367
  • [10] ANNEALING OF DIVACANCIES IN SILICON IRRADIATED WITH FAST-NEUTRONS
    VASILEV, AV
    SMAGULOVA, SA
    SMIRNOV, LS
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (03): : 354 - 356