110K BI-SYSTEM FILMS PREPARED BY RF-MAGNETRON SPUTTERING WITH COMPOUND TARGET

The high-Tc Bi-system films (T(c) > 100 K) could be obtained by a conventional method. The films were rf-magnetron sputtered from a compound target which was prepared by the mixture of Bi2O3, CuO, SrCO3, CaCO3 and PbO powders. After annealing, the temperature dependences of the electrical resistivity and the critical current density were measured. These experimental results show that the films have metallic characteristics with T(c)(onset) > 110 K and T(c)(zero) approximately 105 K and they have mainly 110 K phase with small quantity of 80 K phase.